ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 1 may 2010 ksc5338d/ksc5338dw npn triple diffused planar silicon transistor features ? high voltage power switch switching application ? wide safe operating area ? built-in free-wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices : to-220 or d 2 -pak absolute maximum ratings t a =25c unless otherwise noted * pulse test : pulse wi dth = 5ms, duty cycle 10% thermal characteristics symbol parameter value units v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 12 v i c collector current (dc) 5 a i cp *collector current (pulse) 10 a i b base current (dc) 2 a i bp *base current (pulse) 4 a p c power dissipation (t c =25 c) 75 w t j junction temperature 150 c t stg storage temperature - 55 to 150 c symbol parameter rating units r jc thermal resistance junction to case 1.65 c/w r ja junction to ambient 62.5 c/w t l maximum lead temperature for soldering 270 c c b e equivalent circuit 1 d 2 -pak to-220 1.base 2.collector 3.emitter 1
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 2 electrical characteristics t a =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1000 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 450 v bv ebo emitter-base breakdown voltage i e =1ma, i c =0 12 v i cbo collector cut-off current v cb =800v, i e =0 10 a i ces collector cut-off current v ces =1000v, i eb =0 t a =25 c100 a t a =125 c500 a i ceo collector cut-off current v ce =450v, i b =0 t a =25 c100 a t a =125 c500 a i ebo emitter cut-off current v eb =10v, i c =0 10 a h fe dc current gain v ce =1v, i c =0.8a t a =25 c1525 t a =125 c10 14 v ce =1v, i c =2a t a =25 c69 t a =125 c4 6 v ce =2.5v, i c =1a t a =25 c1825 t a =125 c14 18 v ce (sat) collector-emitter saturation voltage i c =0.8a, i b =0.08a t a =25 c0.350.5v t a =125 c 0.55 0.75 v i c =2a, i b =0.4a t a =25 c 0.47 0.75 v t a =125 c0.91.1v i c =0.8a, i b =0.04a t a =25 c0.91.5v t a =125 c1.82.5v i c =1a, i b =0.2a t a =25 c0.220.5v t a =125 c0.30.6v v be (sat) base-emitter saturation voltage i c =0.8a, i b =0.08a t a =25 c0.81.0v t a =125 c0.650.9v i c =2a, i b =0.4a t a =25 c0.91.0v t a =125 c0.80.9v c ib input capacitance v eb =10v, i c =0.5a, f=1mhz 550 750 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 60 100 pf f t current gain bandwidth product i c =0.5a,v ce =10v 11 mhz v f diode forward voltage i f =1a, i c =1ma, i e =0 t a =25 c0.861.3v t a =125 c0.79 v i f =2a t a =25 c0.951.5v t a =125 c0.88 v t fr diode forward recovery time (di/dt=10a/ s) i f =0.4a i f =1a i f =2a 460 360 325 ns ns ns v ce(dsat) dynamic saturation voltage i c =1a, i b1 =100ma v cc =300v at 1 s t a =25 c8 v t a =125 c15 v i c =1a, i b1 =100ma v cc =300v at 3 s t a =25 c2.9 v t a =125 c8 v i c =2a, i b1 =400ma v cc =300v at 1 s t a =25 c9 v t a =125 c17 v i c =2a, i b1 =400ma v cc =300v at 3 s t a =25 c1.9 v t a =125 c8.5 v
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 3 electrical characteristics (continued) t a =25 c unless otherwise noted symbol parameter test condition min typ. max. units resistive load switching (d.c < 10%, pulse width=40 s) t on turn on time i c =2.5a, i b1 =500ma, i b2 =-1a, v cc =250v, r l = 100 ? 500 750 ns t stg storage time 1.2 1.5 s t f fall time 100 200 ns t on turn on time i c =2a, i b1 =400ma, i b2 =-1a, v cc =300v, r l = 150 ? t a =25 c100150ns t a =125 c150 ns t stg storage time t a =25 c1.42.2 s t a =125 c1.7 s t f fall time t a =25 c90150ns t a =125 c150 ns t on turn on time i c =2.5a, i b1 =500ma, i b2 =-5ma, v cc =300v, r l = 120 ? t a =25 c120150ns t a =125 c150 ns t stg storage time t a =25 c1.8 2.1 s t a =125 c2.6 s t f fall time t a =25 c 110 150 ns t a =125 c160 ns inductive load switching (v cc =15v) t stg storage time i c =2.5a, i b1 =500ma, i b2 =-0.5a, v z =350v, l c =300 h t a =25 c1.92.2 s t a =125 c2.4 s t f fall time t a =25 c160200ns t a =125 c330 ns t c cross-over time t a =25 c350500ns t a =125 c750 ns t stg storage time i c =2a, i b1 =400ma, i b2 =-0.4a, v z =300v, l c =200 h t a =25 c1.95 2.25 s t a =125 c2.9 s t f fall time t a =25 c120150ns t a =125 c270 ns t c cross-over time t a =25 c300450ns t a =125 c700 ns t stg storage time i c =1a, i b1 =100ma, i b2 =-0.5a, v z =300v, l c =200 h t a =25 c0.60.8 s t a =125 c1.0 s t f fall time t a =25 c70ns t a =125 c 110 ns t c cross-over time t a =25 c80130ns t a =125 c170 ns
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 4 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emi tter saturation voltage figure 5. collector-emitter sa turation voltage figure 6. ba se-emitter saturation voltage 0246810 0 1 2 3 4 5 0.9a 0.8a 0.7a 0.6a 0.5a 0.4a 0.3a 0.2a i b = 0 i b = 1a i b = 0.1a i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 t j = +25 o c t j = 125 o c v ce = 1v t j = -25 o c h fe , dc current gain i c [a], collector current 0.01 0.1 1 10 1 10 100 t j = +25 o c t j = 125 o c v ce = 5v t j = -25 o c h fe , dc current gain i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 t j = +25 o c t j = 125 o c i c = 5i b t j = -25 o c v ce (sat)[v], collector-emitter voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 t j = +25 o c t j = 125 o c i c = 10i b t j = -25 o c v ce (sat)[v], collector-emitter voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 t j = +25 o c t j = 125 o c i c = 5i b t j = -25 o c v be (sat)[v], base-emitter voltage i c [a], collector current
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 5 typical characteristics (continued) figure 7. base-emitter saturation voltage figure 8. collector output capacitance figure 9. forward recovery time figure 10. switching time figure 11. induction storage time fi gure 12. inductive crossover time 1e-3 0.01 0.1 1 10 0.1 1 10 t j = +25 o c t j = 125 o c i c = 10i b t j = -25 o c v be (sat)[v], base-emitter voltage i c [a], collector current 1 10 100 10 100 1000 2000 c ib c ob f = 1mhz c ob , c ib [pf], capacitance reverse voltage [v] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 250 300 350 400 450 500 di/dt = 10a/ s t c = 25 o c t fr ,[ns], forward recovery time i f [a], forward current 110 0.01 0.1 1 10 0.2 t stg t f v cc = 250v i c = 5i b1 = 2.5i b2 t stg , t f [ns], switching time i c [a], collector current 05101520 2 3 4 5 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ t j =125 o c i c = 2a @ t j =25 o c i c = 1a @ t j =125 o c i c = 1a @ t j =25 o c t stg [ s], storage time h fe , forced gain 2 4 6 8 101214161820 0 500 1000 1500 2000 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ t j =125 o c i c = 2a @ t j =25 o c i c = 1a @ t j =125 o c i c = 1a @ t j =25 o c t c [ns], crossover time h fe , forced gain
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 6 typical characteristics (continued) figure 13. inductive fall time figure 14. safe operating area figure 15. reverse bias safe operating figure 16. power derating figure 17. rbsoa saturation 2 4 6 8 10 12 14 16 18 20 0 200 400 600 800 1000 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ t j =125 o c i c = 2a @ t j =25 o c i c = 1a @ t j =125 o c i c = 1a @ t j =25 o c t f [ns], fall time h fe , forced gain 10 100 1000 0.01 0.1 1 10 100 dc 5ms 1ms 1 s 10 s i c [a], collector current v ce [v], collector-emitter voltage 200 300 400 500 600 700 800 900 1000 1100 0 1 2 3 4 5 6 7 8 -5v vcc = 50v v be (off) = -5v l c = 1mh ic = 4 ib i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 25 50 75 100 p c [w], power dissipation t c [ o c], case temperature 012345678910 0 1 2 3 4 5 6 ic = 3.3 ib ic = 4 ib ic = 2.2 ib ic = 5 ib vcc = 50v v be (off) = -5v l c = 1mh v ce [v], collector-emitter voltage i ce [a], collector current
ksc5338d/ksc5338dw ? npn triple di ffused planar silicon transistor ? 2010 fairchild semiconductor corporation www.fairchildsemi.com ksc5338d/ksc5338dw rev. b1 7 physical dimensions to-220 dimensions in millimeters
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